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PolarHV TM HiPerFET
Power MOSFET
(Electrically Isolated Back Surface)
IXFC14N60P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
600V
8A
630m Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS 220 TM
Symbol
V DSS
V DGR
V GSS
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Maximum Ratings
600
600
± 30
V
V
V
E153432
V GSM
I D25
Transient
T C = 25 ° C
± 40
8
V
A
G
D
S
Isolated Tab
I DM
T C = 25 ° C, pulse width limited by T JM
42
A
I A
E AS
T C = 25 ° C
T C = 25 ° C
14
900
A
mJ
G = Gate
S = Source
D = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
10
125
-55 ... +150
150
-55 ... +150
300
260
V/ns
W
° C
° C
° C
° C
° C
Features
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
V ISOL
M d
Weight
50/60 Hz, RMS
I ISOL ≤ 1mA
Mounting force
t = 1min
t = 1s
2500
3000
11..66 / 2.5..14.6
2
V~
V~
N/lb.
g
Avanlache rated
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
Applications:
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Switched-mode and resonant-mode
power supplies
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 2.5mA
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 7A, Note 1
T J = 125 ° C
600
3.0
V
5.5 V
± 100 nA
5 μ A
500 μ A
630 m Ω
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
? 2008 IXYS CORPORATION, All rights reserved
DS99409F(12/08 )
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